SQ3989EV-T1_BE3

SQ3989EV-T1_BE3

$0.73
  • Description:MOSFET 2P-CH 30V 2.5A 6TSOP
  • Series:TrenchFET®

SKU:d379e385c2f6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 2.5A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
  • Rds On (Max) @ Id, Vgs:155mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.67W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQ3989EV-T1_BE3

Overview

The SQ3989EV-T1_BE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and operates up to +175 °C junction temperature. The device provides two independent channels in a TSOP-6 package. Key electrical parameters include a maximum on-resistance of 0.155 Ω at VGS = -10 V and 0.300 Ω at VGS = -4.5 V. Continuous drain current reaches -2.5 A at TC = 25 °C. Total gate charge is typically 8.6 nC. The component is AEC-Q101 qualified and undergoes 100% Rg and UIS testing.

Feature Summary

  • Dual P-channel configuration with independent channel control
  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture for optimized performance
  • 100% tested for gate resistance and unclamped inductive switching

Applications

  • Automotive load switching applications
  • High-side power management circuits
  • Battery protection systems
  • Power distribution units in vehicles

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance status. Confirm that the TSOP-6 package dimensions align with your PCB land pattern requirements. Cross-reference the AEC-Q101 qualification status if your application mandates automotive-grade components. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your operating conditions.

Selection Notes

Select this component when dual isolated P-channel switching is required within a compact surface-mount footprint. The low on-resistance supports efficient power handling in automotive environments. Verify that the -30 V rating exceeds your system's maximum voltage peaks. Consider the thermal dissipation capabilities relative to your expected continuous and pulsed current loads to maintain junction temperatures within safe limits.

Part Context

This part belongs to the SQ series of automotive MOSFETs designed by Vishay Siliconix. It complements other dual-channel variants in the lineup, offering specific voltage and current characteristics tailored for automotive electronics. The TSOP-6 package allows for space-constrained designs while maintaining robust thermal performance through the exposed drain pad.

Replacement Considerations

Check for direct substitutes within the SQ series that match the TSOP-6 package and -30 V rating. Verify pinout compatibility before replacing existing components. Ensure any alternative meets the same AEC-Q101 qualification standards if used in automotive contexts.

SQ3989EV-T1_BE3SQ3989EV-T1_BE3
$0.73
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