SQ4282EY-T1_BE3

SQ4282EY-T1_BE3

$1.74
  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:TrenchFET®

SKU:294ca21b351c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Rds On (Max) @ Id, Vgs:12.3mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2367pF @ 15V
  • Power - Max:3.9W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQ4282EY-T1_BE3

Overview

The SQ4282EY-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and supports junction temperatures up to 175 °C. The device provides a continuous drain current of 8 A at 25 °C case temperature. On-state resistance is specified at 12.3 mΩ at VGS = 10 V and 13.5 mΩ at VGS = 4.5 V. Total gate charge is typically 31.5 nC. It is housed in an SO-8 package and meets AEC-Q101 qualification standards.

Feature Summary

  • AEC-Q101 qualified for automotive reliability requirements
  • TrenchFET power MOSFET architecture for optimized performance
  • 100% Rg and UIS tested for enhanced quality assurance

Applications

  • Automotive electronic control units
  • Low-side switching applications
  • Power management circuits requiring high thermal stability

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and material compliance. Confirm that the component meets RoHS and halogen-free requirements as stated in the datasheet. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component for designs requiring dual N-channel configurations with low on-resistance and high thermal endurance. Ensure the application operates within the 30 V drain-source voltage limit and respects the 8 A continuous current rating at specified case temperatures. Consider the SO-8 package dimensions for PCB layout compatibility.

Part Context

This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It is designed specifically for demanding automotive environments where high junction temperatures and robust switching characteristics are required. The dual configuration allows for efficient space utilization in compact circuit designs.

Replacement Considerations

Direct substitutes must match the 30 V rating, dual N-channel configuration, and SO-8 package. Verify that any replacement also holds AEC-Q101 qualification if used in automotive contexts. Check pinout compatibility and thermal resistance values to ensure equivalent performance.

FAQ

Is the SQ4282EY-T1_BE3 suitable for high-temperature automotive applications?

Yes, it is AEC-Q101 qualified and supports an operating junction temperature range up to +175 °C.

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current (IDM) is rated at 32 A under pulse test conditions.

Does the SQ4282EY-T1_BE3 include internal body diodes?

Yes, it contains source-drain diodes with a typical forward voltage of 0.76 V at 8 A.

SQ4282EY-T1_BE3SQ4282EY-T1_BE3
$1.74
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