SQ4284EY-T1_GE3

SQ4284EY-T1_GE3

$1.99
  • Description:MOSFET 2N-CH 40V 8SOIC
  • Series:TrenchFET®

SKU:8f431874d40c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:13.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2200pF @ 25V
  • Power - Max:3.9W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQ4284EY-T1_GE3

Overview

The SQ4284EY-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports continuous drain currents up to 8 A at 25 °C. The device offers low on-state resistance of 13.5 mΩ at VGS = 10 V and 14.8 mΩ at VGS = 4.5 V. Packaged in an SO-8 format, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and undergoes 100% Rg and UIS testing for reliability.

Feature Summary

  • Dual N-channel configuration with independent gate control
  • AEC-Q101 qualified for automotive applications
  • TrenchFET power MOSFET technology
  • 100% Rg and UIS tested

Applications

  • Automotive power switching circuits
  • Low-side load switching applications
  • DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance attributes. Confirm that the requested part number matches the exact electrical specifications required for the target application. Cross-reference the manufacturer's latest datasheet revision to validate current production status and any potential product change notifications before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel MOSFET with 40 V capability and high thermal resilience is required. Ensure the PCB layout accommodates the SO-8 package dimensions and provides adequate copper area for heat dissipation. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance under expected operating temperatures.

Part Context

This component belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It is designed specifically for demanding environments requiring robust performance and high reliability. The dual configuration allows for compact circuit designs while maintaining efficient power handling capabilities suitable for modern automotive electronics.

Replacement Considerations

Direct replacements must match the SO-8 package, 40 V rating, and dual N-channel configuration. Verify pinout compatibility and thermal characteristics. Consult Vishay's official cross-reference tools or contact technical support for validated substitute part numbers.

FAQ

What is the maximum pulsed drain current for the SQ4284EY?

The maximum pulsed drain current (IDM) is 32 A.

Is the SQ4284EY qualified for automotive use?

Yes, the device is AEC-Q101 qualified.

What is the typical gate charge (Qg) at VGS = 10 V?

The typical total gate charge is 30 nC at VGS = 10 V and VDS = 20 V.

SQ4284EY-T1_GE3SQ4284EY-T1_GE3
$1.99
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