SQ4917CEY-T1_GE3

$1.57

Description：MOSFET 2P-CH 60V 8A 8SOIC
Series：TrenchFET®

SKU:fd0a3a40a508 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 60V 8A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Rds On (Max) @ Id, Vgs：48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1910pF @ 30V
Power - Max：5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：Automotive
Qualification：AEC-Q101

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SQ4917CEY-T1_GE3

Overview

The SQ4917CEY-T1_GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -60 V drain-source voltage and an -8 A continuous drain current per leg in an SO-8 surface-mount package. The device is qualified to AEC-Q101 standards and includes 100% Rg and UIS testing. Key electrical parameters include a maximum on-state resistance of 0.048 Ω at VGS = -10 V and 0.0612 Ω at VGS = -4.5 V. It supports a junction temperature range of -55 °C to +175 °C with a maximum power dissipation of 5 W.

Feature Summary

Dual P-channel configuration integrated into a single compact SO-8 package for space-efficient designs.
AEC-Q101 qualification ensures reliability and suitability for demanding automotive electronic environments.
TrenchFET technology provides low on-resistance characteristics to minimize conduction losses.

Applications

Automotive load switching applications requiring high reliability.
Power management circuits within vehicle electronic control units (ECUs).
General-purpose switching in automotive systems operating under strict thermal conditions.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance status. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the component marking with the datasheet pinout diagram to validate correct orientation during assembly.

Selection Notes

Select this component when a dual P-channel topology is required within a standard SO-8 footprint. Evaluate the thermal resistance ratings against the expected PCB copper area and ambient conditions. Confirm that the gate drive voltage levels align with the specified threshold and on-resistance requirements for optimal performance.

Part Context

This part belongs to the SQ4917CEY series, which represents Vishay's automotive-grade enhancement mode MOSFETs. The series is designed to meet rigorous automotive quality standards while providing robust switching capabilities. It serves as a specialized solution for applications where dual-channel integration and high-temperature operation are critical design constraints.