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The Vishay Siliconix SQ4940AEY-T1_BE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports continuous drain currents of 8 A at 25 °C and 5.3 A at 125 °C. The device offers low on-state resistance, specified as 24 mΩ at 10 V gate drive and 29 mΩ at 4.5 V. Packaged in an SO-8 surface-mount format, it operates within a junction temperature range of -55 °C to +175 °C and carries AEC-Q101 qualification.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm current production lifecycle status directly with the manufacturer or authorized distributors before finalizing procurement plans.
Evaluate thermal management requirements based on the 112 °C/W junction-to-ambient resistance when mounted on standard PCBs. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance under varying load conditions.
This component belongs to the SQ4940A family of automotive dual N-channel MOSFETs. It shares core electrical characteristics with variants such as the SQ4940AEY-T1_GE3, differing primarily in packaging and supply chain designation rather than fundamental semiconductor properties.
SQ4940AEY-T1_GE3