SQ4940AEY-T1_GE3

Overview

The SQ4940AEY-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage and an 8 A continuous drain current rating at 25 °C. The device offers a maximum on-resistance of 0.024 Ω at VGS = 10 V and 0.029 Ω at VGS = 4.5 V. Total gate charge is typically 43 nC. It operates within a junction temperature range of -55 °C to +175 °C and is housed in an SO-8 package.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET power MOSFET architecture
• 100% tested for gate resistance and unclamped inductive switching

Applications

• Automotive electronic systems requiring dual N-channel switching
• Low-side load switching applications
• General-purpose power management circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component meets the required AEC-Q101 qualification level for the target application. Ensure thermal management designs account for the specified junction-to-ambient and junction-to-foot thermal resistances under actual operating conditions.

Selection Notes

Select this component when a dual N-channel configuration with low on-resistance is required in an SO-8 package. Consider the 40 V breakdown voltage and 8 A current capability relative to the system's electrical demands. Evaluate the thermal performance based on the PCB mounting constraints and expected duty cycles to ensure operation remains within the safe operating area.

Part Context

This part belongs to the SQ4940A series of automotive dual N-channel MOSFETs. It shares the SO-8 footprint and general specifications with variants such as the SQ4946CEY-T1_GE3, which offers a higher 60 V rating but different current characteristics. The GE3 suffix indicates lead-free and halogen-free compliance.

Replacement Considerations

SQ4946CEY-T1_GE3