SQ4946AEY-T1_GE3

$1.11

Description：MOSFET 2N-CH 60V 7A 8SOIC
Series：TrenchFET®

SKU:f8b930fb386a Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 7A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：7A
Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：750pF @ 25V
Power - Max：4W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：Automotive
Qualification：AEC-Q101

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SQ4946AEY-T1_GE3

Overview

The SQ4946AEY is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and supports a continuous drain current of 7 A per leg at 25 °C. The device offers a maximum on-state resistance of 0.040 Ω at VGS = 10 V and 0.055 Ω at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in an SO-8 package.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture for optimized performance
100% tested for gate resistance and unclamped inductive switching

Applications

Automotive load switching applications
High-side and low-side power control circuits
General purpose power management in vehicle electronics

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets the required automotive qualification standards for the intended application environment. Cross-reference the datasheet revision with the manufacturing date code to validate technical specifications.

Selection Notes

Select this component when a dual N-channel configuration is required in an SO-8 footprint. Evaluate the thermal resistance ratings against the expected PCB copper area and ambient conditions. Confirm that the gate drive voltage aligns with the specified RDS(on) thresholds for optimal conduction losses.

Part Context

This part belongs to the Vishay Siliconix SQ series of TrenchFET MOSFETs designed for robust power switching. The dual configuration allows for efficient bridge or H-bridge implementations within a compact surface-mount package suitable for space-constrained automotive designs.