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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：865pF @ 25V
- Power - Max：4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4946CEY-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports junction temperatures up to 175 °C. Each channel provides a continuous drain current of 7 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.040 Ω at VGS = 10 V and 0.055 Ω at VGS = 4.5 V. Packaged in an SO-8 surface-mount format, it is fully qualified under AEC-Q101 standards.
Feature Summary
- Dual N-channel configuration with independent gate control for each leg
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET architecture optimized for low conduction losses
- 100% tested for gate resistance and single-pulse avalanche energy
Applications
- Automotive high-side or low-side switching applications
- Power distribution circuits requiring dual-channel isolation
- Load switching in vehicle body electronics modules
Procurement Notes
Verify the complete ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance specifications. Confirm that the specific revision level matches the design requirements. Cross-reference the datasheet document number 77342 for the most current electrical characteristics and thermal ratings before finalizing procurement orders.
Selection Notes
Select this component when a dual-channel solution is required within a standard SO-8 footprint. Ensure the application voltage does not exceed the 60 V limit. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance level. Consider the thermal resistance values if operating near the maximum junction temperature limits.
Part Context
This part belongs to the SQ series of automotive MOSFETs manufactured by Vishay Siliconix. The 'GE3' suffix indicates lead-free and halogen-free construction compliant with RoHS directives. The base model SQ4946CEY defines the electrical performance, while the suffix specifies the tape-and-reel packaging format.
Replacement Considerations
Consult the official Vishay cross-reference guide for verified substitutes. Ensure any replacement maintains the same package type, voltage rating, and thermal characteristics. Verify that alternative parts meet AEC-Q101 qualification if used in automotive contexts.
