SQ4949EY-T1_BE3

Overview

The SQ4949EY-T1_BE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports a continuous drain current of -7.5 A per leg at 25 °C. The device achieves a maximum on-resistance of 0.035 Ω at VGS = -10 V and 0.065 Ω at VGS = -4.5 V. Packaged in a lead-free SO-8 format, it operates within a junction temperature range of -55 °C to +175 °C. Key dynamic parameters include a total gate charge of 19.5 nC and turn-on delay time of 11 ns.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET power MOSFET architecture with 100% Rg and UIS testing
• Dual independent P-channel configuration in a single package

Applications

• Automotive load switching applications
• High-side power management circuits
• General-purpose low-voltage power control

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through manufacturer resources. Validate that the component meets the required automotive qualification standards before integration into final designs.

Selection Notes

Select this component when dual isolated P-channel switching is required in a compact footprint. Ensure the application voltage does not exceed the -30 V rating. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the SQ4949EY series of automotive dual P-channel MOSFETs. It shares the same core electrical specifications as the SQ4949EY-T1_GE3 variant, differing primarily in the manufacturing or packaging designation indicated by the suffix.

Replacement Considerations

The SQ4949EY-T1_GE3 is a confirmed public substitute offering identical electrical characteristics. Verify pin compatibility and thermal requirements when transitioning between these variants.