SQ4961EY-T1_GE3

Overview

The SQ4961EY-T1_GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology and qualified to AEC-Q101 standards. It features a -60 V drain-source voltage rating and supports continuous drain currents of -4.4 A per leg at 25 °C. The device offers low on-state resistance, typically 0.070 Ω at VGS = -10 V and 0.095 Ω at VGS = -4.5 V. Packaged in an SO-8 surface-mount format, it operates within a junction temperature range of -55 °C to +175 °C and includes 100% UIS testing.

Feature Summary

• Dual P-channel configuration with independent channel control
• AEC-Q101 qualification for automotive reliability requirements
• TrenchFET power MOSFET technology for optimized performance
• 100% tested for unclamped inductive switching (UIS)

Applications

• Automotive load switching applications
• High-side power management circuits
• Motor control interfaces

Procurement Notes

Verify the complete part number including the suffix against official Vishay documentation to ensure correct package and lead-free specifications. Confirm that the required AEC-Q101 qualification aligns with specific project reliability standards before finalizing procurement decisions.

Selection Notes

Select this component when designing high-side switches requiring dual P-channel isolation in a compact SO-8 footprint. Ensure gate drive voltages meet the specified thresholds for optimal RDS(on) performance and verify thermal dissipation capabilities based on the PCB mounting conditions defined in the datasheet.

Part Context

This device belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It is specifically engineered for robust performance in demanding automotive environments, offering enhanced ruggedness through comprehensive UIS testing and strict material categorization compliance.

Replacement Considerations

Direct substitutes require matching dual P-channel topology, -60 V minimum VDS, and SO-8 packaging. Verify equivalent RDS(on) values and AEC-Q101 certification status to maintain system reliability without redesigning the gate drive or thermal management infrastructure.

FAQ

What is the maximum pulsed drain current capability?

The absolute maximum ratings specify a pulsed drain current (IDM) of -18 A.

How does the on-resistance vary with temperature?

RDS(on) increases significantly with temperature; it rises from a typical 0.070 Ω at 25 °C to 0.176 Ω at 175 °C under identical test conditions.

Is the internal body diode characterized?

Yes, the source-drain diode characteristics are provided, including a forward voltage of up to 1.2 V at -3 A and a pulsed current rating of -18 A.