SQ9945AEY-T1-E3

$0.59

Description：MOSFET 2N-CH 60V 3.7A 8SOIC
Series：TrenchFET®

SKU:71092e426e7b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3.7A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.7A
Rds On (Max) @ Id, Vgs：80mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.4W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SQ9945AEY-T1-E3

Overview

The SQ9945AEY-T1-E3 is a dual N-channel Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and a maximum continuous drain current of 3.7 A at 25 °C. The device exhibits a typical on-state resistance of 0.080 Ω at VGS = 10 V. Designed for automotive applications, it has passed AEC-Q101 reliability testing and supports an operating junction temperature range of -55 °C to +175 °C. The component is housed in a lead-free SO-8 package.

Feature Summary

Dual N-channel configuration with low thermal resistance packaging
Automotive-grade qualification passing all AEC-Q101 reliability tests
TrenchFET power MOSFET technology for optimized performance

Applications

Automotive electronic systems requiring high-reliability switching
Low-side load switching applications
General-purpose power management circuits

Procurement Notes

Verify the ordering suffix matches the required termination type; the -E3 suffix indicates Pb-free compliance. Confirm that the SO-8 package variant aligns with the target PCB footprint. Ensure the design accounts for the specified thermal resistance ratings under actual mounting conditions rather than relying solely on datasheet limits.

Selection Notes

Select this component when a dual N-channel MOSFET with 60 V capability and automotive certification is required. Evaluate the 0.080 Ω RDS(on) against the specific load current requirements to ensure acceptable conduction losses. Verify that the gate drive voltage of 10 V is compatible with the system logic levels for optimal switching performance.

Part Context

This part belongs to the SQ9945AEY series of automotive-grade dual MOSFETs. It is the lead-free version (suffix -E3) of the standard SQ9945AEY-T1. Both variants share identical electrical characteristics and are designed for high-reliability environments.