SQ9945BEY-T1_BE3

$1.39

Description：MOSFET 2N-CH 60V 5.4A 8SOIC
Series：TrenchFET®

SKU:6256baa91951 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 5.4A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：5.4A (Tc)
Rds On (Max) @ Id, Vgs：64mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：470pF @ 25V
Power - Max：4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：Automotive
Qualification：AEC-Q101

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SQ9945BEY-T1_BE3

Overview

The SQ9945BEY is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and supports junction temperatures up to 175 °C. Each channel provides a continuous drain current of 5.4 A at 25 °C and 3.1 A at 125 °C. The on-state resistance is 0.064 Ω at VGS = 10 V and 0.082 Ω at VGS = 4.5 V. Packaged in an SO-8 surface-mount format, the device includes single pulse avalanche energy ratings of 3.6 mJ.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture with 100% Rg and UIS testing
Dual configuration providing two independent N-channel paths in one package

Applications

Automotive load switching applications
High-side or low-side power distribution circuits
Motor control interfaces requiring dual-channel isolation

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part marking against official datasheet documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free requirements. Ensure the procurement source provides traceability to authorized manufacturing locations to maintain compliance with automotive quality standards.

Selection Notes

Select this component when a dual-channel solution is required within a compact SO-8 footprint. Evaluate thermal management capabilities based on the 112 °C/W junction-to-ambient rating under standard PCB mounting conditions. Verify that the gate drive voltage meets the minimum threshold for optimal on-resistance performance at the intended operating temperature.

Part Context

This device belongs to the Vishay Siliconix automotive MOSFET portfolio designed for high-reliability environments. It complements other TrenchFET series components by offering integrated dual-channel functionality. The SO-8 package facilitates automated surface-mount assembly while maintaining robust electrical characteristics suitable for demanding automotive electronic systems.