SQD40N06-14L_GE3

$1.71

Description：MOSFET N-CH 60V 40A TO252AA
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:828985e02db0 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQD40N06-14L_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 40A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQD40N06-14L_GE3

Description：MOSFET N-CH 60V 40A TO252AA
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2105 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SQD40N06-14L_GE3

SQD40N06-14L_GE3

Single FETs, MOSFETs Overview

The SQD40N06-14L_GE3 is an automotive-grade N-channel enhancement mode MOSFET from the Vishay Siliconix SQ Rugged series. It utilizes TrenchFET technology and is housed in a TO-252 (DPAK) surface-mount package with the drain connected to the tab. The device features a 60 V drain-source breakdown voltage, a continuous drain current of 40 A at 25 °C case temperature, and a maximum on-state resistance of 0.014 Ω at VGS = 10 V. It supports a junction temperature range of -55 °C to +175 °C and has been verified for avalanche energy up to 51 mJ.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture providing low thermal resistance
AEC-Q101 qualified for automotive reliability standards
100% tested for gate charge and single pulse avalanche stress

Single FETs, MOSFETs Applications

Automotive power switching circuits
High-side and low-side load switch applications
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix GE3 indicates lead-free and RoHS compliance status according to Vishay's material categorization guidelines. Confirm that the TO-252 package dimensions match your PCB footprint requirements. Ensure the design accounts for the 75 W power dissipation limit when mounted on a standard 1-inch square FR4 PCB.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating and 40 A continuous current capability are required in a compact DPAK form factor. The low on-resistance minimizes conduction losses in high-current paths. Consider the thermal impedance characteristics if operating near the upper junction temperature limits or under pulsed conditions exceeding standard duty cycles.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay SQD series of ruggedized automotive MOSFETs. The series is characterized by enhanced avalanche robustness and low thermal resistance compared to standard discrete devices. The SQD40N06-14L variant specifically targets applications requiring high current handling within the 60 V voltage class.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include the SQD25N06-22L_GE3, which offers lower current ratings but similar voltage specifications. Cross-referencing should verify pinout compatibility and ensure the replacement meets the same AEC-Q101 qualification standards.