SQJ152ELP-T1_GE3

Single FETs, MOSFETs Overview

The SQJ152ELP-T1_GE3 is an automotive-grade N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device provides a continuous drain current of 123 A at 25 °C case temperature and supports a pulsed drain current of 168 A. On-state resistance is specified as 5.0 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 4.5 V. Packaged in a PowerPAK SO-8L footprint, it is fully qualified under AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability requirements
• TrenchFET Gen IV power MOSFET architecture
• 100% Rg and UIS tested for enhanced robustness

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-side load switch applications
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and material categorization requirements by referencing the manufacturer's compliance documents. Confirm that the component meets the required AEC-Q101 qualification standards for your specific application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in high-current automotive applications. The PowerPAK SO-8L package offers a compact solution suitable for space-constrained PCB layouts. Consider the thermal performance characteristics and the specific gate charge requirements to ensure compatibility with your driver circuitry and switching frequency constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L surface-mount package, which is designed for efficient thermal dissipation and reliable soldering in automated assembly processes. The device is manufactured using silicon technology optimized for high-performance power switching applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without validating electrical parameters, package dimensions, and AEC-Q101 qualification status.