SQJ200EP-T1_GE3

Overview

The SQJ200EP-T1_GE3 is an automotive-grade dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SO-8L Dual Asymmetric package with two distinct channels: Channel 1 provides 20 A continuous drain current with a maximum on-resistance of 8.8 mΩ at VGS = 10 V, while Channel 2 delivers 60 A with a maximum on-resistance of 3.7 mΩ under the same conditions. Both channels support a 20 V drain-source voltage and operate within a junction temperature range of -55 °C to +175 °C. The device is AEC-Q101 qualified and includes 100% Rg and UIS testing.

Feature Summary

• Dual asymmetric configuration combining a high-current channel (60 A) with a moderate-current channel (20 A) in a single leadless package.
• TrenchFET power MOSFET architecture optimized for low on-state resistance and fast switching performance.
• AEC-Q101 qualification ensures reliability for demanding automotive electronic environments.
• Manufactured with exposed copper terminals requiring specific soldering considerations for adequate interconnection.

Applications

• Automotive power distribution systems
• High-side or low-side load switch applications
• DC-DC converter output stages

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official Vishay documentation. Confirm that the ordering suffix matches the required specifications exactly. Ensure compliance with RoHS directives and material categorization requirements as defined in the product datasheet before finalizing procurement orders.

Selection Notes

Select this component when a compact dual-channel solution is required for automotive circuits operating at 20 V. The asymmetric design allows simultaneous management of different load currents without occupying multiple PCB footprints. Evaluate thermal dissipation capabilities based on the specific junction-to-case resistance values for each channel during system design.

Part Context

This component belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8L Dual Asymmetric package, which distinguishes it from standard symmetric packages by providing unequal channel characteristics within a single footprint. The GE3 suffix indicates compliance with specific environmental standards.

Replacement Considerations

Direct replacements must match the 20 V rating, dual N-channel configuration, and PowerPAK SO-8L Dual Asymmetric package dimensions. Verify that substitute components meet AEC-Q101 automotive qualification requirements and possess comparable on-resistance and thermal characteristics.

FAQ

What is the difference between Channel 1 and Channel 2?

Channel 1 is rated for 20 A continuous drain current with a higher on-resistance, while Channel 2 supports up to 60 A with significantly lower on-resistance, allowing for asymmetric load handling.

Is the PowerPAK SO-8L package leaded?

No, the PowerPAK SO-8L is a leadless package where the end of the lead terminal is exposed copper resulting from the singulation process.

What are the gate-source voltage limits?

The absolute maximum gate-source voltage is ±20 V for both channels.