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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 20A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：20A, 60A
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：975pF @ 6V
- Power - Max：27W, 48W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual Asymmetric
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ202EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 12 V drain-source voltage rating and operates within a -55 °C to +175 °C junction temperature range. The device integrates two asymmetric channels in a PowerPAK SO-8L package. Channel 1 provides a continuous drain current of 20 A with a maximum on-resistance of 6.5 mΩ at VGS = 10 V. Channel 2 supports up to 60 A with a maximum on-resistance of 3.3 mΩ under the same conditions. Both channels are qualified to AEC-Q101 standards.
Feature Summary
- Dual asymmetric N-channel configuration for flexible circuit integration
- TrenchFET power MOSFET architecture for optimized performance
- AEC-Q101 qualification for automotive reliability requirements
Applications
- Automotive electronic control units (ECUs)
- Power distribution networks in vehicles
- Low-side switching applications
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix matches the specified GE3 designation to ensure compliance with material categorization definitions. Validate RoHS status through the provided datasheet references before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring distinct current handling capabilities within a single package. The asymmetric design allows one channel to manage high-current loads while the other handles lower currents, optimizing board space. Ensure gate drive voltages align with the specified thresholds for optimal on-state resistance performance across the operating temperature range.
Part Context
This component belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8L Dual Asymmetric package, which is designed for surface mount applications. The device is part of a broader family of TrenchFET power MOSFETs engineered for high efficiency and robust thermal performance in demanding environments.
Replacement Considerations
Direct replacements must match the 12 V rating, dual N-channel configuration, and PowerPAK SO-8L footprint. Verify that any substitute component meets AEC-Q101 automotive qualification standards and maintains comparable on-resistance values for both channels to ensure circuit compatibility.
