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The Vishay Siliconix SQJ202EP-T2_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 12 V drain-source voltage rating and operates up to +175 °C junction temperature. The device integrates two asymmetric channels within a PowerPAK SO-8L package. Channel 1 provides a continuous drain current of 20 A with a maximum on-resistance of 6.5 mΩ at VGS = 10 V. Channel 2 supports 60 A with a maximum on-resistance of 3.3 mΩ under the same conditions. Both channels are qualified to AEC-Q101 standards.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required tape-and-reel packaging format. Ensure compliance with RoHS directives and material categorization standards as defined by Vishay Intertechnology, Inc. prior to final procurement authorization.
Select this component when a single package solution requires distinct current handling capabilities for separate circuit paths. The asymmetric design allows optimization for different load profiles without increasing board space. Verify thermal management requirements against the specified junction-to-case resistance values for the intended operating environment.
This part belongs to the SQJ series of automotive MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8L Dual Asymmetric package, which differs from standard symmetric layouts by providing unequal channel sizes. This family focuses on high-current density applications requiring robust avalanche energy ratings.
Direct replacements must match the 12 V rating, PowerPAK SO-8L Dual Asymmetric footprint, and AEC-Q101 qualification. Verify pinout compatibility, specifically the asymmetric drain and source terminal assignments, before substituting other dual N-channel variants.