SQJ244EP-T1_GE3

SQJ244EP-T1_GE3

$1.73
  • Description:MOSFET 2N-CH 40V 20A PPAK SO8
  • Series:TrenchFET®

SKU:43090078966a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 20A PPAK SO8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs:11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1200pF @ 25V, 2800pF @ 25V
  • Power - Max:27W (Tc), 48W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SO-8 Dual
  • Supplier Device Package:PowerPAK® SO-8 Dual Asymmetric
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQJ244EP-T1_GE3

Overview

The SQJ244EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device employs an asymmetric PowerPAK SO-8L package containing two distinct channels. Channel 1 provides a maximum continuous drain current of 20 A with a typical on-resistance of 0.011 Ω at VGS = 10 V. Channel 2 supports up to 60 A with a typical on-resistance of 0.0045 Ω under the same conditions. Both channels are qualified to AEC-Q101 standards.

Feature Summary

  • AEC-Q101 qualified for automotive reliability requirements
  • Asymmetric dual configuration optimized for synchronous buck applications
  • TrenchFET power MOSFET structure ensuring low conduction losses
  • 100% Rg and UIS tested for enhanced manufacturing quality

Applications

  • Automotive synchronous buck converters
  • DC/DC converter modules
  • Power distribution networks in vehicles

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part marking against official datasheet documentation. Confirm that the ordering suffix matches the specified reel or cut tape packaging format. Ensure compliance with RoHS directives and material categorization requirements as defined in Vishay's standard product declarations before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring asymmetric current handling capabilities within a single footprint. Evaluate thermal management strategies based on the specific junction-to-case resistance values provided for each channel. Verify that gate drive voltages align with the specified threshold characteristics to ensure optimal switching performance and minimize conduction losses during operation.

Part Context

This component belongs to the SQJ series of Vishay Siliconix MOSFETs, specifically designed for high-efficiency power switching. The PowerPAK SO-8L package offers a compact form factor suitable for space-constrained PCB layouts. The dual asymmetric design allows independent optimization of high-side and low-side switching elements within a single integrated solution.

Replacement Considerations

Direct replacements must match the 40 V rating, PowerPAK SO-8L package, and dual N-channel configuration. Verify that substitute components meet AEC-Q101 qualification standards if used in automotive applications. Check pinout compatibility and thermal resistance specifications to ensure equivalent circuit performance.

SQJ244EP-T1_GE3SQJ244EP-T1_GE3
$1.73
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