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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 20A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc), 54A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V, 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1000pF @ 25V, 2100pF @ 25V
- Power - Max：27W (Tc), 48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual Asymmetric
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ264EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and operates up to +175 °C junction temperature. The package is the asymmetric PowerPAK SO-8L, providing two distinct channels: Channel 1 with a typical RDS(on) of 0.0165 Ω at 10 V gate drive and 20 A continuous current, and Channel 2 with a typical RDS(on) of 0.0071 Ω and 54 A continuous current. Both channels are AEC-Q101 qualified.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- TrenchFET power MOSFET technology
- Asymmetric dual N-channel configuration in a single package
Applications
- Synchronous buck converter applications
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Ensure compliance with RoHS directives and material categorization standards as defined in the product specification sheet before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a compact dual-N-channel solution with high current handling capabilities. The asymmetric design allows for optimized performance where one channel requires lower on-resistance than the other. Verify thermal management requirements based on the specific junction-to-case resistance values provided in the datasheet for your operating conditions.
Part Context
This device belongs to the SQJ264EP series of automotive dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed specifically for synchronous rectification applications within the 60 V voltage range. The component utilizes the PowerPAK SO-8L asymmetric package to maximize current density while maintaining a small footprint suitable for dense PCB layouts.
Replacement Considerations
Direct replacements must match the 60 V rating, dual N-channel configuration, and PowerPAK SO-8L asymmetric package dimensions. Verify that any substitute component meets AEC-Q101 qualification requirements if used in automotive contexts. Check pinout compatibility and thermal resistance characteristics to ensure equivalent performance in the target application.
