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SQJ488EP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 42A PPAK SO-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SQJ488EP-T1_GE3
- Description：MOSFET N-CH 100V 42A PPAK SO-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：979 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SQJ488EP-T1_GE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SQJ488EP-T1_GE3 is an automotive-grade N-channel Power MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and supports a continuous drain current of 42 A at 25 °C case temperature. The device offers a maximum on-resistance of 0.021 Ω at VGS = 10 V and 0.0258 Ω at VGS = 4.5 V. It is housed in a leadless PowerPAK SO-8L package, operates within a junction temperature range of -55 °C to +175 °C, and has a thermal resistance (junction-to-case) of 1.8 °C/W.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- 100% gate resistance and unclamped inductive switching tested
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-side or low-side load switch applications
- DC motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'GE3' confirms lead-free and halogen-free compliance as stated in the ordering information. Confirm that the component is intended for surface mount assembly using the recommended pad pattern for the PowerPAK SO-8L package. Ensure design parameters align with the absolute maximum ratings provided in the datasheet to maintain operational integrity.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel configuration with high current capability and automotive qualification is required. The low on-resistance minimizes conduction losses, while the leadless package facilitates efficient heat dissipation through the drain pad. Verify that the gate drive voltage meets the threshold requirements for full enhancement at the intended operating current.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L package, which provides a compact footprint with enhanced thermal performance compared to traditional packages. The series is designed specifically for demanding automotive environments requiring robust reliability and high switching efficiency.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the SQJ series that match the 100V rating and PowerPAK SO-8L package. Ensure any replacement maintains AEC-Q101 qualification if automotive use is required. Verify pinout compatibility and thermal characteristics before substitution.
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