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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：27mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1850pF @ 20V
- Power - Max：48W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ500AEP-T1_GE3 is an automotive-grade N- and P-channel MOSFET pair from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The N-channel device provides a continuous drain current of 30 A with a maximum on-resistance of 9.2 mΩ at VGS = ±10 V. The P-channel counterpart also supports 30 A with a maximum on-resistance of 27.0 mΩ under the same conditions. Packaged in a leadless PowerPAK SO-8L dual configuration, it is designed for high-efficiency power switching applications.
Feature Summary
- Automotive qualification compliant with AEC-Q101 standards
- TrenchFET power MOSFET architecture for optimized performance
- Dual N- and P-channel configuration in a single compact package
Applications
- Automotive power distribution systems
- High-side and low-side load switch circuits
- DC-DC converter output stages
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's official datasheet document number 62878. Confirm that the ordering suffix corresponds to the specified lead-free and halogen-free material categorization. Ensure the procurement channel sources parts directly from authorized distributors or the manufacturer to guarantee compliance with automotive reliability requirements.
Selection Notes
Select this component when a matched N- and P-channel pair is required for synchronous rectification or bridge driver topologies. The 40 V rating suits 12 V automotive electrical systems. Evaluate thermal management needs based on the 48 W power dissipation limit at 25 °C case temperature. Verify gate drive voltage compatibility with the specified RDS(on) thresholds at 10 V and 4.5 V.
Part Context
This part belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8L package, which offers a leadless design for improved thermal performance and smaller footprint compared to traditional SO-8 packages. The series is specifically engineered to meet the rigorous reliability and environmental standards required for modern automotive electronic control units.
Replacement Considerations
Direct functional substitutes within the same Vishay family include the SQJ844AEP-T1_GE3 (dual N-channel, 30 V) and the SQJ500ELP-T1_GE3 (dual P-channel, 40 V). When replacing, verify that the alternative package dimensions match the PowerPAK SO-8L footprint and that the thermal resistance characteristics are compatible with the existing PCB layout.
