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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V, 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1900pF @ 25V, 4600pF @ 25V
- Power - Max：34W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ504EP-T1_BE3 is an automotive-grade N- and P-channel MOSFET pair in a PowerPAK SO-8L dual package. It features TrenchFET technology and AEC-Q101 qualification. The N-channel provides a maximum drain-source voltage of 40 V, continuous drain current of 30 A at 25 °C, and on-resistance of 7.5 mΩ at VGS = 10 V. The P-channel offers -40 V breakdown, -30 A current, and 17 mΩ resistance under identical conditions. Both channels operate up to +175 °C junction temperature with 100% Rg and UIS testing.
Feature Summary
- Automotive-grade reliability with AEC-Q101 qualification
- TrenchFET power MOSFET technology for low conduction losses
- Dual configuration integrating N- and P-channel devices in one package
- Leadless PowerPAK SO-8L package optimized for thermal performance
Applications
- Automotive power management systems
- High-side and low-side switching applications
- Motor control circuits requiring complementary channel pairs
- DC-DC converter topologies utilizing integrated N/P pairs
Procurement Notes
Verify the complete ordering code against Vishay's official documentation before procurement. Confirm that the suffix matches the required lead-free and halogen-free specifications. Ensure the component meets the specific automotive qualification standards required by your design. Cross-reference the datasheet revision date to guarantee parameter accuracy during sourcing.
Selection Notes
Select this component when a compact dual MOSFET solution is required for automotive environments. The PowerPAK SO-8L package reduces board space compared to discrete components. Verify thermal requirements against the junction-to-ambient resistance values provided. Ensure gate drive voltages align with the specified thresholds for optimal on-state performance.
Part Context
This part belongs to the SQJ series of automotive MOSFETs from Vishay Siliconix. It utilizes the PowerPAK SO-8L case outline 2 package. The device integrates both N-channel and P-channel transistors into a single dual configuration. This integration supports simplified layout designs for complementary switching applications.
Replacement Considerations
Consult Vishay's official substitution guide for verified alternatives. Ensure any replacement maintains the same dual N/P configuration and PowerPAK SO-8L footprint. Verify that substitute parts meet AEC-Q101 automotive qualification requirements. Check pinout compatibility and thermal characteristics before implementation.
