SQJ504EP-T1_GE3

$1.83

Description：MOSFET N/P-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:90758177ee57 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1900pF @ 25V, 4600pF @ 25V
Power - Max：34W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ504EP-T1_GE3

Overview

The SQJ504EP-T1_GE3 is an automotive-grade, dual N- and P-channel MOSFET from Vishay Siliconix. It utilizes TrenchFET technology and is housed in a leadless PowerPAK SO-8L package. The device is AEC-Q101 qualified for high reliability. Key electrical parameters include a drain-source voltage of ±40 V and a continuous drain current of ±30 A at 25 °C. The on-state resistance is specified at 0.0075 Ω (N-Channel) and 0.0170 Ω (P-Channel) at VGS = ±10 V. It supports junction temperatures up to +175 °C.

Feature Summary

Dual configuration integrating both N-Channel and P-Channel transistors within a single compact package.
TrenchFET power MOSFET architecture designed to minimize conduction losses.
AEC-Q101 qualification ensuring compliance with automotive industry reliability standards.
Manufactured using lead-free and halogen-free materials.

Applications

Automotive power management systems
High-side and low-side switching applications
Motor control circuits

Procurement Notes

Verify the complete ordering suffix against the official Vishay database to ensure correct material categorization and packaging specifications. Confirm that the specific revision of the datasheet matches the production lot requirements. Ensure the component meets all necessary environmental compliance standards required by the end application before finalizing procurement.

Selection Notes

Select this component when a compact dual-switching solution is required for automotive environments. Evaluate thermal performance based on the junction-to-case thermal resistance of 4.3 °C/W. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Consider the maximum pulsed drain current limits during transient load conditions.

Part Context

This part belongs to the SQJ504EP series, which features dual N- and P-channel configurations. It is distinct from single-channel variants like the SQJ454EP or other packages such as the standard SO-8. The PowerPAK SO-8L package provides a leadless design optimized for surface mount applications requiring high current density.