SQJ570EP-T1_GE3

$1.49

Description：MOSFET N/P-CH 100V 15A PPAK SO8
Series：TrenchFET®

SKU:636c48f5cbee Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 100V 15A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V, 600pF @ 25V
Power - Max：27W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ570EP-T1_GE3

Overview

The Vishay Siliconix SQJ570EP-T1_GE3 is an automotive-grade N- and P-channel MOSFET pair housed in a PowerPAK SO-8L dual package. It features a 100 V drain-source voltage rating and supports junction temperatures up to 175 °C. The N-channel provides a continuous drain current of 15 A with a maximum on-resistance of 0.045 Ω at VGS = ± 10 V, while the P-channel delivers -9.5 A with a maximum RDS(on) of 0.146 Ω under identical conditions. The device is AEC-Q101 qualified and includes 100% gate resistance and avalanche testing.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET technology
Dual configuration integrating N- and P-channel devices

Applications

Automotive electronic control units
Power distribution systems
Motor driver circuits

Procurement Notes

Verify the complete ordering suffix against the manufacturer's official documentation to ensure correct packaging and material compliance specifications. Confirm that the component meets specific project requirements for lead-free and halogen-free materials as defined by Vishay standards before finalizing procurement orders.

Selection Notes

Select this component when a compact dual MOSFET solution is required for 100 V automotive applications. Ensure the design accommodates the thermal characteristics of the PowerPAK SO-8L package and verify that the gate drive voltages align with the specified threshold and on-state resistance parameters for optimal performance.

Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within a small footprint. The dual configuration allows for efficient half-bridge or high-side/low-side switching applications in space-constrained automotive designs.

Replacement Considerations

Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other models without validating pinout compatibility, electrical ratings, and package dimensions against the datasheet specifications.