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Product Detailed Parameters
- Description：AUTOMOTIVE DUAL N-CHANNEL 40 V (
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：82A (Tc)
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1633pF @ 25V
- Power - Max：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8L Dual BWL
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SQJ746ELP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 82 A per leg at 25 °C case temperature. The device offers a maximum on-state resistance of 0.0062 Ω at VGS = 10 V and 0.0088 Ω at VGS = 4.5 V. Packaged in a PowerPAK SO-8L Dual BWL footprint, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and subjected to 100% Rg and UIS testing.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture
- Dual configuration with independent channels
Applications
- Automotive electronic systems requiring high current switching
- Low-side power switching applications
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with lead-free and halogen-free material requirements. Confirm that the package type matches the PowerPAK SO-8L Dual BWL specification. Cross-reference the document number 62293 for the most current technical parameters and reliability data before finalizing procurement.
Selection Notes
Select this component when a dual N-channel configuration with low on-resistance is required for automotive environments. Ensure the gate drive voltage meets the threshold for optimal conduction at either 10 V or 4.5 V. Verify thermal management capabilities align with the specified junction-to-ambient and junction-to-case thermal resistance ratings for the intended PCB layout.
Part Context
This part belongs to the SQJ series of automotive MOSFETs from Vishay Siliconix. It shares the PowerPAK SO-8L Dual BWL package form factor with other dual-channel variants in the lineup. The 'GE3' suffix indicates environmental compliance, specifically lead-free and halogen-free construction as defined by Vishay's material categorization guidelines.
Replacement Considerations
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package compatibility or similar voltage ratings without verifying electrical specifications and qualification status.
