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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：7mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1869pF @ 15V
- Power - Max：48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ910AEP-T1_BE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage and supports a continuous drain current of 30 A per leg. The device offers a low on-state resistance of 5.8 mΩ at VGS = 10 V and 7.2 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and includes 100% gate resistance and UIS testing.
Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- Automotive qualification compliant with AEC-Q101 standards
- Leadless PowerPAK SO-8L package design for efficient thermal dissipation
- Guaranteed 100% gate resistance and unclamped inductive switching (UIS) testing
Applications
- Automotive electronic control units (ECUs)
- High-side and low-side load switch applications
- DC motor control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the requested part number matches the exact package type and electrical specifications required for the target application. Ensure all technical parameters are validated against the latest datasheet revision before procurement.
Selection Notes
Select this component for applications requiring robust automotive reliability and high current handling in a compact footprint. Consider the low on-resistance values for minimizing conduction losses. Verify that the operating conditions remain within the absolute maximum ratings, particularly regarding pulsed drain current and avalanche energy limits.
Part Context
This component belongs to the Vishay Siliconix SQJ series of automotive-grade MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The PowerPAK SO-8L package provides a compact solution suitable for space-constrained PCB layouts while maintaining effective thermal management capabilities.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package or voltage ratings. Verify that any alternative component meets the same AEC-Q101 qualification and electrical specifications.
