SQJ910AEP-T2_GE3

Overview

The SQJ910AEP-T2_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage and a continuous drain current of 30 A per leg. The device offers a low on-state resistance of 7 mΩ at VGS = 10 V and 8.6 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L format, it supports junction temperatures up to 175 °C and is qualified under AEC-Q101 standards.

Feature Summary

• TrenchFET power MOSFET architecture for optimized performance
• Automotive qualification compliant with AEC-Q101 standards
• Dual configuration within a compact leadless PowerPAK SO-8L package

Applications

• Automotive electronic systems requiring high reliability
• Low-side switching applications in vehicle circuits
• Power management modules operating within 30 V limits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets the required AEC-Q101 qualification level for the intended automotive application before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring dual N-channel switching with a 30 V rating. Evaluate thermal dissipation requirements based on the specified RthJA and RthJC values. Confirm gate drive voltage compatibility with the threshold characteristics provided in the datasheet.

Part Context

This part belongs to the SQJ910AEP series of automotive MOSFETs manufactured by Vishay Siliconix. It is designed specifically for robust performance in demanding environments, leveraging advanced trench technology to achieve low conduction losses and high current handling capabilities.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capacities, and package dimensions to ensure functional equivalence without compromising system reliability.

FAQ

Is the SQJ910AEP-T2_GE3 suitable for high-temperature automotive environments?

Yes, the device is rated for a maximum junction temperature of 175 °C and holds AEC-Q101 qualification.

What is the maximum pulsed drain current for this MOSFET?

The absolute maximum rating specifies a pulsed drain current (IDM) of 120 A.

Does the PowerPAK SO-8L package have plated leads?

No, the end of the lead terminal is exposed copper due to the singulation process; plating is not present.