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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：3000pF @ 25V
- Power - Max：48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ912BEP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports continuous drain currents of 30 A per leg at 25 °C case temperature. The device offers low on-state resistance, typically 0.011 Ω at VGS = 10 V and 0.012 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L format, it is qualified to AEC-Q101 standards and rated for junction temperatures up to 175 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET architecture for optimized performance
- 100% Rg and UIS tested for enhanced quality assurance
Applications
- Automotive electronic systems requiring robust switching capabilities
- Low-side or high-side load switching applications
- Power management circuits operating within 40 V limits
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance status. Confirm that the component meets all necessary automotive qualification standards required for your specific application environment before finalizing procurement decisions.
Selection Notes
Select this component when a dual N-channel configuration with low on-resistance is required for automotive environments. Ensure the gate drive voltage aligns with the specified thresholds for optimal conduction characteristics. Consider thermal management strategies given the package's thermal resistance ratings under various mounting conditions.
Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It shares the PowerPAK SO-8L package form factor with other devices in the lineup but differs in voltage and current ratings. The 'GE3' suffix indicates Green molding and halogen-free compliance.
Replacement Considerations
Direct replacements must match the 40 V rating, dual channel configuration, and PowerPAK SO-8L package. Verify that any substitute also holds AEC-Q101 qualification if automotive use is intended. Check pinout compatibility and thermal characteristics carefully.
