SQJ912DEP-T1_GE3

$1.17

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:caba975bbccc Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：7.3mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：27W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ912DEP-T1_GE3

Overview

The Vishay Siliconix SQJ912DEP-T1_GE3 is an automotive-grade dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports continuous drain currents of 30 A per leg at 25 °C case temperature. The device exhibits low on-state resistance, with maximum values of 7.3 mΩ at VGS = 10 V and 10.2 mΩ at VGS = 4.5 V. Packaged in the leadless PowerPAK SO-8L format, it is qualified to AEC-Q101 standards and rated for operation across a junction temperature range of -55 °C to +175 °C.

Feature Summary

AEC-Q101 qualified for automotive reliability requirements
TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAK SO-8L package design for efficient thermal dissipation

Applications

Automotive power distribution systems
High-side and low-side load switch applications
DC motor control circuits

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives and material categorization standards prior to integration into production assemblies.

Selection Notes

Evaluate the maximum on-resistance specifications at the intended gate drive voltage to ensure acceptable conduction losses. Assess the thermal management strategy based on the junction-to-case thermal resistance rating under expected operating conditions. Verify that the peak pulsed current capabilities align with the application's transient load requirements.

Part Context

This component belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. The series utilizes TrenchFET technology to achieve low on-resistance within compact surface-mount packages. The specific model integrates two independent N-channel devices into a single leadless footprint to facilitate space-constrained circuit designs.