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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 15A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs：16mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：896pF @ 20V
- Power - Max：48W, 43W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual Asymmetric
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ940EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage and operates within a -55 °C to +175 °C junction temperature range. The device contains two asymmetric channels in a PowerPAK SO-8L package. Channel 1 provides a continuous drain current of 15 A with a maximum on-resistance of 0.016 Ω at 10 V gate drive. Channel 2 supports 18 A with a maximum on-resistance of 0.0064 Ω under the same conditions. Both channels are qualified to AEC-Q101 standards.
Feature Summary
- Dual asymmetric N-channel configuration for flexible circuit integration
- TrenchFET power MOSFET architecture for optimized switching performance
- AEC-Q101 qualification ensuring reliability for automotive environments
- 100% tested for gate resistance and single pulse avalanche energy
Applications
- Automotive power distribution systems
- High-side and low-side load switch applications
- DC-DC converter output stages
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm package type and compliance status. Confirm that the requested component matches the exact part number SQJ940EP-T1_GE3, as variations exist within the product family. Ensure the supplier provides traceability data consistent with automotive quality requirements.
Selection Notes
Select this component when a compact dual MOSFET solution is required for 40 V automotive circuits. The asymmetric channel design allows independent optimization for different current paths. Verify thermal management capabilities based on the specific PCB copper area and ambient operating conditions.
Part Context
This component belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L leadless package to provide high power density in a small footprint. The device is designed specifically for demanding automotive electronic applications requiring robust switching performance.
Replacement Considerations
SQJ940EP-T1-GE3
FAQ
What is the maximum pulsed drain current for each channel?
Channel 1 supports a maximum pulsed drain current of 60 A, while Channel 2 supports 72 A.
Is the device suitable for high-temperature automotive environments?
Yes, the device is rated for a junction and storage temperature range of -55 °C to +175 °C.
How does the package affect soldering recommendations?
The PowerPAK SO-8L is a leadless package where manual soldering with an iron is not recommended due to exposed copper tips resulting from singulation.
