ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：17mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1680pF @ 10V
- Power - Max：56W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The SQJ951EP-T1_BE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports a continuous drain current of -30 A at 25 °C. The device achieves a maximum on-resistance of 0.017 Ω at VGS = -10 V and 0.036 Ω at VGS = -4.5 V. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to +175 °C. Packaged in a leadless PowerPAK SO-8L Dual configuration, the component includes 100% gate resistance and UIS testing.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET technology for optimized performance
- Leadless PowerPAK SO-8L Dual package design
Applications
- Automotive load switching applications
- High-side power control circuits
- Power distribution units in vehicle electronics
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Ensure compatibility with the specified leadless PowerPAK SO-8L Dual footprint during PCB layout. Validate thermal management strategies based on the provided junction-to-ambient resistance ratings.
Selection Notes
Select this component for applications requiring dual P-channel isolation in a compact form factor. Consider the low on-resistance values for efficient power handling at standard logic levels. Evaluate the thermal performance characteristics against the expected duty cycle and ambient conditions. Verify that the -30 V rating aligns with the system's maximum operating voltage constraints.
Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L Dual package to provide two independent channels in a single surface-mount footprint. The series is designed to meet stringent automotive reliability standards while maintaining high electrical performance.
Replacement Considerations
Check for direct substitutes within the SQJ9xxEP family that share identical pinouts and electrical parameters. Verify package compatibility when considering alternative manufacturers. Ensure any replacement maintains the same AEC-Q101 qualification level.
