ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：30A
- Rds On (Max) @ Id, Vgs：17mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1680pF @ 10V
- Power - Max：56W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The SQJ951EP-T1_GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports continuous drain currents up to -30 A at 25 °C. The device exhibits a maximum on-resistance of 0.017 Ω at VGS = -10 V and 0.036 Ω at VGS = -4.5 V. Packaged in a leadless PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and includes 100% gate resistance and UIS testing.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET technology for optimized performance
- Leadless PowerPAK SO-8L package design
Applications
- Automotive electronic systems requiring high thermal stability
- Low-side switching applications with dual channel requirements
- Power management circuits operating under extreme temperature conditions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Ensure compliance with RoHS directives and material categorization standards as defined by Vishay. Confirm that the leadless package soldering profile meets application requirements, noting that manual rework is not recommended.
Selection Notes
Select this component for designs requiring dual P-channel isolation in a compact footprint. Evaluate thermal dissipation capabilities based on PCB mounting constraints, as the junction-to-ambient resistance is 85 °C/W. Verify gate drive voltages align with the specified thresholds for optimal on-state resistance performance across the required temperature range.
Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L package, which provides enhanced thermal performance compared to standard SO-8 packages. The 'EP' designation indicates automotive qualification, while 'GE3' denotes lead-free and halogen-free compliance.
Replacement Considerations
Direct replacements must match the -30 V rating, dual P-channel configuration, and PowerPAK SO-8L package. Verify equivalent RDS(on) values and thermal characteristics. Cross-reference AEC-Q101 qualification status if used in automotive applications.
