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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 23A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1800pF @ 30V
- Power - Max：25W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ952EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and a maximum continuous drain current of 23 A per leg at 25 °C case temperature. The device offers a typical on-state resistance of 0.012 Ω at VGS = 10 V, with a total gate charge of 24 nC. Packaged in a leadless PowerPAK SO-8L format, it supports junction temperatures up to 175 °C and meets AEC-Q101 qualification standards.
Feature Summary
- Dual N-channel configuration within a compact leadless PowerPAK SO-8L package
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET architecture for optimized performance
- 100% Rg and UIS tested for enhanced manufacturing quality
Applications
- Automotive power distribution systems
- High-side or low-side switching applications
- Motor control circuits requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the component matches the intended thermal management strategy, as the leadless PowerPAK SO-8L package relies heavily on PCB copper area for heat dissipation. Confirm that the application environment remains within the specified operating temperature range.
Selection Notes
Select this component when a dual N-channel solution is required in a small footprint. Evaluate the thermal resistance characteristics against the expected load current and ambient conditions. Consider the gate charge and threshold voltage specifications to ensure compatibility with the driving circuitry. Verify that the 60 V rating provides sufficient margin for the target application voltage spikes.
Part Context
This part belongs to the SQJ952EP series of automotive MOSFETs. It is manufactured by Vishay Siliconix and utilizes the PowerPAK SO-8L package. The product is designed to meet the rigorous demands of automotive electronics, offering high current handling capabilities in a space-constrained form factor.
Replacement Considerations
Direct substitutes must match the dual N-channel configuration, 60 V rating, and PowerPAK SO-8L package. Verify pinout compatibility and thermal resistance values before implementation.
