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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：36mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：735pF @ 25V
- Power - Max：34W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ960EP-T1_GE3 is an automotive-grade, dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports continuous drain currents of 8 A per leg at 25 °C case temperature. The device offers low on-state resistance, typically 30 mΩ at VGS = 10 V and 40 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L (SO-8-4) footprint, it provides high thermal efficiency with a junction-to-case thermal resistance of 4.3 °C/W. Qualified under AEC-Q101 standards, the component operates reliably across a wide temperature range from -55 °C to +175 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET technology for optimized performance
- Leadless PowerPAK SO-8L package design for efficient thermal dissipation
- 100% Rg and UIS tested for enhanced manufacturing quality
Applications
- Automotive power distribution systems
- High-side and low-side load switch applications
- DC-DC converter circuits
- Motor control interfaces
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to prevent counterfeit parts. Confirm RoHS status and material categorization details prior to finalizing orders.
Selection Notes
Select this component when designing circuits requiring dual N-channel switching with a 60 V breakdown voltage. Evaluate the 30 mΩ on-resistance at VGS = 10 V for standard logic levels, or consider the 40 mΩ value if operating at VGS = 4.5 V. Verify that the PCB layout accommodates the PowerPAK SO-8L dimensions and thermal pad requirements for optimal heat transfer.
Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive-grade MOSFETs. It shares the PowerPAK SO-8L package form factor with other variants in the lineup but differs in voltage ratings and current handling capabilities. The 'GE3' suffix indicates Green Mold Compound and Halogen-Free compliance.
Replacement Considerations
Direct replacements must match the 60 V rating, dual N-channel configuration, and PowerPAK SO-8L package. Check datasheets for equivalent RDS(on) values and thermal resistance characteristics to ensure circuit compatibility without redesigning the PCB footprint.
