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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：60mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：475pF @ 25V
- Power - Max：25W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ962EP-T1-GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and supports continuous drain currents of 8 A per leg at 25 °C and 125 °C case temperatures. The device offers low on-state resistance, typically 0.046 Ω at VGS = 10 V and 0.060 Ω at VGS = 4.5 V. Packaged in a lead-free PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C and includes 100% Rg and UIS testing for reliability.
Feature Summary
- AEC-Q101 qualified for automotive electronic component standards
- TrenchFET power MOSFET technology for optimized performance
- Dual configuration with independent N-channel circuits
- 100% tested for gate resistance and single pulse avalanche energy
Applications
- Automotive power distribution systems
- High-side and low-side load switching applications
- DC motor control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the requested part number matches the exact electrical specifications required for the target application. Cross-reference the manufacturer's latest datasheet revision to confirm current availability and any potential design changes before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration with 60 V rating is required for automotive environments. Evaluate thermal management requirements based on the specified junction-to-case and junction-to-ambient thermal resistances. Confirm that the gate drive voltage meets the minimum threshold for the desired on-state resistance level, particularly if operating below 10 V.
Part Context
This component belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It is designed specifically for high-reliability applications requiring robust performance under varying thermal conditions. The PowerPAK SO-8L package provides a compact footprint suitable for space-constrained PCB layouts while maintaining adequate thermal dissipation capabilities.
Replacement Considerations
Consult official substitution guides for verified alternatives. Generic replacements may not match the AEC-Q101 qualification or specific thermal characteristics.
