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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 23.5A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：23.5A (Tc)
- Rds On (Max) @ Id, Vgs：33.6mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：714pF @ 30V
- Power - Max：42W (Tc)
- Operating Temperature：-55°C ~ 175°C (TA)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ968EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 23.5 A per leg at 25 °C. The device offers low on-state resistance, typically 0.028 Ω at VGS = 10 V and 0.0444 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L (PowerPAK-SO-8-4) footprint, it operates within a junction temperature range of -55 °C to +175 °C. The component holds AEC-Q101 qualification and undergoes 100% Rg and UIS testing.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- Dual configuration with independent channel control
- Leadless PowerPAK SO-8L package design
Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- Motor control circuits
- Lighting control modules
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements. Ensure that the requested part number matches the exact package variant and material categorization specifications required for the target application environment.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-case thermal resistances. Confirm that gate drive voltages align with the threshold characteristics for optimal conduction. Validate PCB layout dimensions against the recommended pad pattern for the PowerPAK SO-8L package.
Part Context
This component belongs to the SQJ series of dual N-channel MOSFETs designed for high-efficiency switching. It shares the PowerPAK SO-8L form factor with other Vishay devices but is distinguished by its specific 60 V rating and dual-channel configuration tailored for automotive environments.
Replacement Considerations
Direct substitutes include other Vishay dual N-channel MOSFETs in the same package, such as the SQJB00EP-T1_BE3 or SQJ992EP-T1_GE3, provided their electrical ratings meet the circuit requirements.
