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Product Detailed Parameters
- Description：MOSFET 2N-CH 75V 17A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：75V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：790pF @ 35V
- Power - Max：34W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ980AEP-T1_BE3 is an automotive-grade, dual N-channel Power MOSFET utilizing TrenchFET technology. It features a 75 V drain-source voltage rating and operates up to a junction temperature of 175 °C. The device provides an on-state resistance (RDS(on)) of 0.050 Ω at VGS = 10 V and 0.066 Ω at VGS = 4.5 V. Continuous drain current reaches 17 A at 25 °C case temperature. Packaged in a leadless PowerPAK SO-8L-4 surface-mount format, it supports high thermal dissipation with a junction-to-case thermal resistance of 4.3 °C/W.
Feature Summary
- Automotive reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
- Advanced TrenchFET power MOSFET architecture designed to minimize conduction losses and improve switching efficiency.
- Comprehensive electrical validation including 100% gate resistance and unclamped inductive switching (UIS) testing.
Applications
- Automotive DC-DC converter circuits
- High-side and low-side load switch implementations
- Motor control driver stages
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's part marking against official datasheet documentation. Confirm that the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives and material categorization standards prior to integration into production assemblies.
Selection Notes
Evaluate the RDS(on) specifications against the target gate drive voltage to ensure adequate conduction efficiency. Assess the thermal management requirements based on the junction-to-case resistance and expected ambient operating conditions. Verify that the package dimensions align with the printed circuit board layout constraints.
Part Context
This component belongs to the Vishay Siliconix SQJ980AEP series, which consists of dual N-channel MOSFETs optimized for automotive applications. The series utilizes TrenchFET technology to deliver low on-resistance within a compact PowerPAK SO-8L package, supporting high-density designs.
Replacement Considerations
Direct substitutes include the SQJ980AEP-T1_GE3 variant, which shares identical electrical characteristics but may differ in tape-and-reel packaging specifications.
