SQJ980AEP-T1_GE3

$1.57

Description：MOSFET 2N-CH 75V 17A PPAK SO8
Series：TrenchFET®

SKU:22bb2272df58 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 75V 17A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：75V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Rds On (Max) @ Id, Vgs：50mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：790pF @ 35V
Power - Max：34W (Tc)
Operating Temperature：-55°C ~ 175°C (TA)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ980AEP-T1_GE3

Overview

The SQJ980AEP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 75 V drain-source voltage and operates up to +175 °C junction temperature. The device offers low on-state resistance of 0.050 Ω at VGS = 10 V and 0.066 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it supports continuous drain currents up to 17 A per leg at 25 °C. The component is AEC-Q101 qualified and includes 100% gate resistance and UIS testing for reliability.

Feature Summary

Automotive-grade qualification compliant with AEC-Q101 standards
TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAK SO-8L package design for efficient thermal dissipation
Comprehensive reliability verification including 100% gate resistance and UIS testing

Applications

Automotive power distribution systems
High-side and low-side load switch applications
DC motor control circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested variant matches the required tape and reel specifications for automated assembly processes. Ensure compliance with RoHS directives as indicated in the product summary.

Selection Notes

Evaluate the maximum continuous drain current limits based on the expected operating junction temperature. Consider the thermal resistance characteristics when designing the PCB layout to ensure adequate heat dissipation. Verify that the gate drive voltage meets the requirements for the specified on-state resistance levels.

Part Context

This component belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It is designed specifically for high-reliability automotive environments requiring robust switching capabilities within a compact surface-mount footprint.

Replacement Considerations

Consult official cross-reference lists or contact Vishay technical support for verified substitute part numbers. Do not assume pin compatibility or electrical equivalence with other dual N-channel MOSFETs without datasheet validation.