SQJ992EP-T2_GE3

$1.26

Description：MOSFET 2N-CH 60V 15A PPAK SO8
Series：TrenchFET®

SKU:3a2a8d384592 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 15A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Rds On (Max) @ Id, Vgs：56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：446pF @ 30V
Power - Max：34W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

Download product information

SQJ992EP-T2_GE3

Overview

The SQJ992EP-T2_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology and qualified to AEC-Q101 standards. It features a 60 V drain-source voltage rating and supports continuous drain currents of 15 A per leg at 25 °C. The device offers low on-state resistance, typically 47 mΩ at VGS = 10 V and 62 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L (SO-8L Dual) format, it provides a junction-to-case thermal resistance of 4.3 °C/W and operates within a temperature range of -55 °C to +175 °C.

Feature Summary

AEC-Q101 qualified for automotive reliability requirements
TrenchFET power MOSFET technology for optimized performance
100% Rg and UIS tested for enhanced robustness

Applications

Automotive electronic systems requiring high-reliability switching
Low-side load switching applications
Power management circuits operating up to 175 °C

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the requested variant matches the required electrical specifications and packaging configuration before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact footprint. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on). Validate thermal dissipation capabilities based on the PCB copper area and ambient conditions.

Part Context

This part belongs to the SQJ992EP series of automotive dual N-channel MOSFETs. It shares the same core die and electrical characteristics as the SQJ992EP-T1_GE3, differing primarily in the reel packaging configuration rather than functional parameters.