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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1700pF @ 25V
- Power - Max：48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8
- Supplier Device Package：PowerPAK® SO-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJB00EP-T1_BE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 13 mΩ at VGS = 10 V. It operates within a junction temperature range of -55 °C to +175 °C and includes 100% gate resistance and unclamped inductive switching (UIS) testing. The component is housed in a leadless PowerPAK SO-8L package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- Dual configuration with independent N-channel legs
Applications
- Automotive power distribution systems
- High-side and low-side load switch applications
- DC motor control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details, as variations exist between tape-and-reel formats. Ensure compliance with RoHS directives by checking the manufacturer's material categorization report. Confirm that the requested quantity aligns with standard reel sizes or cut-tape availability requirements specified by authorized distributors.
Selection Notes
Select this component when a dual N-channel topology is required for space-constrained automotive designs. Evaluate thermal management needs based on the 48 W maximum power dissipation rating at 25 °C case temperature. Consider the 13 mΩ RDS(on) specification for efficiency calculations under typical load conditions and verify gate drive compatibility with the 10 V threshold requirements.
Part Context
This part belongs to the Vishay Siliconix SQJB series, which focuses on high-current, low-resistance dual MOSFET solutions. The series utilizes advanced TrenchFET technology to minimize conduction losses while maintaining robust avalanche energy capabilities. It is designed specifically for demanding automotive environments requiring high reliability and compact footprint.
Replacement Considerations
Direct replacements must match the dual N-channel configuration, 60 V rating, and PowerPAK SO-8L package. Verify equivalent RDS(on) and thermal characteristics. Cross-reference with other Vishay SQJB variants or comparable automotive-grade dual MOSFETs from other manufacturers if pinout and electrical parameters align.
