SQJB44EP-T1_GE3

$1.80

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®

SKU:67288ef1b88d Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：5.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3075pF @ 25V
Power - Max：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJB44EP-T1_GE3

Overview

The SQJB44EP-T1_GE3 is an automotive-grade dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports continuous drain currents of 30 A per leg at 25 °C and 120 A pulsed. The device offers low on-state resistance (RDS(on)) of 5.2 mΩ at VGS = 10 V and 7.0 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L with four pins, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and undergoes 100% Rg and UIS testing.

Feature Summary

Dual N-channel configuration housed in a compact, leadless PowerPAK SO-8L package for efficient surface-mount integration.
TrenchFET power MOSFET architecture engineered to deliver high current handling capabilities alongside minimized conduction losses.
AEC-Q101 qualification ensures compliance with automotive reliability standards, validated through comprehensive 100% Rg and UIS testing.

Applications

Automotive power distribution systems
High-side and low-side switching applications
Motor control circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and material compliance details. Ensure that procurement channels provide traceable certificates of conformity. Cross-reference the full part number with authorized distributors to validate authenticity and confirm adherence to the latest datasheet revisions before finalizing orders.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case and junction-to-ambient thermal resistances. Confirm that gate drive voltages align with the threshold characteristics for optimal RDS(on) performance. Verify PCB layout constraints to accommodate the PowerPAK SO-8L footprint and ensure adequate copper area for heat dissipation during continuous operation.

Part Context

This component belongs to the SQJB series of automotive dual N-channel MOSFETs manufactured by Vishay Siliconix. The series is characterized by its use of advanced TrenchFET technology to achieve low on-resistance and high current density within a small form factor. These devices are specifically designed to meet the rigorous demands of modern automotive electronic systems.