SQJB44EP-T1_JE3

$1.02

Description：AUTOMOTIVE DUAL N-CHANNEL 40V (D
Series：TrenchFET®

SKU:99996a5dfb15 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：AUTOMOTIVE DUAL N-CHANNEL 40V (D
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：5.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3075pF @ 25V
Power - Max：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

Download product information

SQJB44EP-T1_JE3

Overview

The Vishay Siliconix SQJB44EP-T1_JE3 is an automotive-grade dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 30 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance of 5.2 mΩ at VGS = 10 V and 7.0 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C and meets AEC-Q101 qualification standards.

Feature Summary

Dual N-channel configuration with independent gate and source terminals for each channel
TrenchFET power MOSFET structure optimized for low on-resistance and fast switching
AEC-Q101 qualified for automotive reliability requirements
Leadless PowerPAK SO-8L package designed for efficient thermal dissipation

Applications

Automotive power distribution systems
High-side and low-side load switch applications
DC-DC converter circuits requiring compact dual-channel solutions

Procurement Notes

Verify the JE3 suffix against official documentation to confirm material compliance status. Ensure procurement channels provide traceability to Vishay manufacturing sites. Confirm that the component matches the specific tape-and-reel packaging format required by automated assembly equipment. Validate that the received parts correspond to the exact document revision specified in the design specifications.

Selection Notes

Select this component when a dual N-channel topology is required within a single footprint. The 40 V rating suits 12 V and 24 V automotive electrical systems. Evaluate the 5.2 mΩ RDS(on) for conduction loss calculations at target operating currents. Consider the 30 A continuous current capability relative to the thermal management strategy employed in the final PCB layout.

Part Context

This part belongs to the SQJB44EP series of automotive dual MOSFETs from Vishay Siliconix. The series utilizes TrenchFET technology to achieve high performance in a compact surface-mount package. The product line is specifically engineered to meet the rigorous reliability standards demanded by modern automotive electronic control units and power management modules.