SQJB60EP-T1_GE3

Overview

The SQJB60EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and supports a continuous drain current of 30 A per leg at 25 °C. The device offers a maximum on-state resistance of 0.012 Ω at VGS = 10 V and 0.016 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it is qualified to AEC-Q101 standards and rated for junction temperatures up to 175 °C.

Feature Summary

• AEC-Q101 qualified for automotive reliability requirements
• TrenchFET power MOSFET architecture for optimized performance
• 100% tested for both on-resistance and unclamped inductive switching

Applications

• Automotive power distribution systems
• High-side or low-side load switch applications
• DC motor control circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure that the component meets the required automotive qualification standards for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component when a dual N-channel configuration with high current capability is required in a compact surface-mount footprint. Consider the thermal resistance characteristics and the specific gate drive voltage requirements to ensure optimal on-state resistance performance within the circuit design.

Part Context

This part belongs to the SQJB series of dual N-channel MOSFETs designed for automotive environments. It shares the PowerPAK SO-8L package form factor with other Vishay silicon devices but is distinguished by its specific 60 V rating and dual-channel topology optimized for space-constrained automotive PCB layouts.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the same dual N-channel configuration, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility.