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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 100A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：5900pF @ 20V
- Power - Max：75W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 8 x 8 Dual
- Supplier Device Package：PowerPAK® 8 x 8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJQ904E-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports junction temperatures up to 175 °C. Each channel provides a continuous drain current of 100 A at 25 °C case temperature. The device achieves a maximum on-state resistance of 3.4 mΩ at VGS = 10 V. Packaged in a leadless PowerPAK 8 x 8L format, it is qualified under AEC-Q101 standards and undergoes 100% Rg and UIS testing.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power MOSFET architecture for optimized performance
- Dual configuration with independent channels in a compact leadless package
Applications
- Automotive power distribution systems
- High-current motor control applications
- Low-side switching circuits requiring high thermal stability
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm compliance with RoHS directives and material categorization standards. Ensure that procurement specifications align with the required AEC-Q101 qualification status for automotive deployment. Confirm package orientation and pinout definitions prior to integration into PCB layouts.
Selection Notes
Evaluate the thermal resistance characteristics relative to the intended PCB copper area and mounting conditions. Consider the gate charge parameters when designing drive circuits to ensure efficient switching transitions. Verify that the application's peak current demands remain within the pulsed drain current limits defined in the absolute maximum ratings table.
Part Context
This component belongs to the SQJQ series of automotive MOSFETs designed for high-current applications. It shares the PowerPAK 8 x 8L footprint with other devices in the family but offers distinct electrical characteristics tailored for 40 V systems. The series emphasizes robustness through comprehensive avalanche energy testing.
Replacement Considerations
SQJQ404E-T1_GE3
FAQ
What is the maximum single pulse avalanche energy (EAS) for this device?
The datasheet specifies a maximum single pulse avalanche energy of 125 mJ when tested with an inductance of 0.1 mH.
How does the on-state resistance vary with junction temperature?
The on-state resistance increases significantly as the junction temperature rises, reaching a maximum of 9.1 mΩ at 175 °C compared to the typical 2.9 mΩ at 25 °C.
Is manual soldering recommended for the PowerPAK 8 x 8L package?
No, manual soldering with a soldering iron is not recommended for these leadless components due to the exposed copper terminals and singulation process.
