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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 95A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：95A (Tc)
- Rds On (Max) @ Id, Vgs：3.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：3600pF @ 20V
- Power - Max：50W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 8 x 8 Dual
- Supplier Device Package：PowerPAK® 8 x 8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJQ906E-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 95 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance of 3.3 mΩ at VGS = 10 V. It operates within a junction temperature range of -55 °C to +175 °C and includes a built-in body diode with a pulsed forward current capability of 600 A. The component is housed in a leadless PowerPAK 8 x 8L package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- 100% tested for gate resistance and unclamped inductive switching
Applications
- Automotive load switching applications
- High-current DC-DC converter circuits
- Motor control systems requiring low on-resistance
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the PowerPAK 8 x 8L package dimensions match the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-case resistance values under actual operating conditions.
Selection Notes
Select this component when a dual configuration is required for space-constrained designs. Evaluate the 3.3 mΩ RDS(on) against system conduction loss targets. Consider the 40 V breakdown voltage relative to supply rail variations. Verify compatibility with standard 10 V gate drive levels for optimal switching performance.
Part Context
This part belongs to the Vishay SQJQ series, which focuses on automotive-grade dual MOSFETs. The series utilizes TrenchFET technology to achieve low on-resistance in compact packages. The SQJQ906E specifically targets high-current applications requiring robust avalanche energy handling capabilities.
Replacement Considerations
Check datasheets for alternative dual N-channel MOSFETs with matching 40 V ratings and similar RDS(on) specifications. Verify pinout compatibility for the PowerPAK 8 x 8L package before substitution.
