SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SQJQ910EL-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and supports a continuous drain current of 70 A per leg at 25 °C case temperature. The device exhibits a maximum on-resistance of 8.6 mΩ at VGS = 10 V and 11.4 mΩ at VGS = 4.5 V. Packaged in the leadless PowerPAK 8 x 8L-4 surface-mount format, it operates within a junction temperature range of -55 °C to +175 °C. The component is fully Pb-free, AEC-Q101 qualified, and subjected to 100% Rg and UIS testing.
Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to prevent counterfeit parts. Confirm RoHS compliance status through the provided datasheet references before finalizing purchase orders.
Select this component when designing circuits requiring high current capacity in a compact footprint. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat sinking. Consider the gate charge parameters to ensure compatibility with the driving circuitry's switching frequency capabilities.
This part belongs to the Vishay Siliconix SQJQ series of automotive MOSFETs. It shares the PowerPAK 8 x 8L package form factor with other high-current devices in the lineup but is distinguished by its specific 100 V breakdown voltage and dual-channel topology designed for demanding power management tasks.
Direct substitutes must match the 100 V rating, dual N-channel configuration, and PowerPAK 8 x 8L-4 package dimensions. Verify that any alternative component meets the same AEC-Q101 qualification standards and thermal performance metrics.