SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3

$2.86
  • Description:MOSFET 2N-CH 100V 70A PPAK8X8
  • Series:TrenchFET®

SKU:be02ad88e7b0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 70A PPAK8X8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:70A (Tc)
  • Rds On (Max) @ Id, Vgs:8.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2832pF @ 50V
  • Power - Max:187W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® 8 x 8 Dual
  • Supplier Device Package:PowerPAK® 8 x 8 Dual
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQJQ910EL-T1_GE3

Overview

The SQJQ910EL-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and supports a continuous drain current of 70 A per leg at 25 °C case temperature. The device exhibits a maximum on-resistance of 8.6 mΩ at VGS = 10 V and 11.4 mΩ at VGS = 4.5 V. Packaged in the leadless PowerPAK 8 x 8L-4 surface-mount format, it operates within a junction temperature range of -55 °C to +175 °C. The component is fully Pb-free, AEC-Q101 qualified, and subjected to 100% Rg and UIS testing.

Feature Summary

  • Dual N-channel configuration with independent gate and source terminals for each channel
  • AEC-Q101 qualification ensuring reliability for automotive electronic systems
  • TrenchFET power MOSFET architecture providing low on-state resistance
  • Leadless PowerPAK package design optimized for high thermal dissipation

Applications

  • Automotive power distribution networks
  • High-side and low-side switching applications
  • Motor control circuits requiring robust avalanche energy handling

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to prevent counterfeit parts. Confirm RoHS compliance status through the provided datasheet references before finalizing purchase orders.

Selection Notes

Select this component when designing circuits requiring high current capacity in a compact footprint. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat sinking. Consider the gate charge parameters to ensure compatibility with the driving circuitry's switching frequency capabilities.

Part Context

This part belongs to the Vishay Siliconix SQJQ series of automotive MOSFETs. It shares the PowerPAK 8 x 8L package form factor with other high-current devices in the lineup but is distinguished by its specific 100 V breakdown voltage and dual-channel topology designed for demanding power management tasks.

Replacement Considerations

Direct substitutes must match the 100 V rating, dual N-channel configuration, and PowerPAK 8 x 8L-4 package dimensions. Verify that any alternative component meets the same AEC-Q101 qualification standards and thermal performance metrics.

SQJQ910EL-T1_GE3SQJQ910EL-T1_GE3
$2.86
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