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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 100A PPAK8X8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：113nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：6600pF @ 25V
- Power - Max：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 8 x 8 Dual
- Supplier Device Package：PowerPAK® 8 x 8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJQ936E is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and supports junction temperatures up to 175 °C. Each channel provides a continuous drain current of 100 A at 25 °C case temperature, with a maximum on-state resistance of 2.3 mΩ at VGS = 10 V. The device is housed in a PowerPAK 8 x 8L Dual package and is qualified under AEC-Q101 standards.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET Gen IV technology for optimized performance
- 100% tested for gate charge and single-pulse avalanche energy
Applications
- Automotive power distribution systems
- High-current motor control applications
- Low-side switching in vehicle electronics
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and material compliance. Confirm that the component meets the required AEC-Q101 qualification level for your target application before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring high current handling in a compact surface-mount footprint. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Validate gate drive voltages against the absolute maximum ratings to prevent dielectric breakdown.
Part Context
This part belongs to the Vishay Siliconix SQJQ series of automotive MOSFETs. It is designed specifically for high-power density applications where low on-resistance and robust avalanche capability are critical. The PowerPAK 8 x 8L Dual package allows for efficient PCB layout in space-constrained automotive modules.
Replacement Considerations
Direct replacements must match the 40 V rating, dual configuration, and PowerPAK 8 x 8L Dual package dimensions. Verify that any substitute component also holds AEC-Q101 qualification and comparable RDS(on) and thermal characteristics.
