SQJQ936EL-T1_GE3

SQJQ936EL-T1_GE3

$3.00
  • Description:MOSFET 2N-CH 40V 100A PPAK8X8
  • Series:TrenchFET®

SKU:5aee7ac80cad Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 100A PPAK8X8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Rds On (Max) @ Id, Vgs:2.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:7300pF @ 25V
  • Power - Max:75W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® 8 x 8 Dual
  • Supplier Device Package:PowerPAK® 8 x 8 Dual
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQJQ936EL-T1_GE3

Overview

The SQJQ936EL-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 100 A per leg at 25 °C case temperature. The device exhibits a maximum on-resistance of 2.3 mΩ at VGS = 10 V and 2.7 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK 8 x 8L format, it operates within a junction temperature range of -55 °C to +175 °C. The component holds AEC-Q101 qualification and undergoes 100% Rg and UIS testing.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture
  • Lead-free construction with material categorization compliance

Applications

  • Automotive power switching circuits
  • High-current load management systems
  • Low-side switching applications requiring high thermal stability

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm package type and tape-and-reel specifications. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the document number 77854 when requesting technical support or datasheets.

Selection Notes

Select this component for designs requiring low on-resistance in a compact dual configuration. Evaluate the thermal resistance characteristics relative to the PCB copper area and mounting conditions. Confirm that the gate drive voltage meets the specified thresholds for optimal conduction performance under expected operating temperatures.

Part Context

This part belongs to the SQJQ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK 8 x 8L leadless package designed for efficient heat dissipation and surface mount assembly. The series is engineered to meet rigorous automotive quality and reliability requirements.

Replacement Considerations

Consult official Vishay documentation for verified alternative part numbers. Do not substitute based solely on electrical parameter similarity without confirming package compatibility and automotive qualification status.

FAQ

Is the SQJQ936EL-T1_GE3 suitable for high-temperature automotive environments?

Yes, the device is rated for a maximum junction temperature of +175 °C and is AEC-Q101 qualified.

What is the maximum pulsed drain current capability?

The absolute maximum ratings specify a pulsed drain current (IDM) of 400 A.

Does the package include plated leads?

No, the PowerPAK 8 x 8L is a leadless package where the terminal ends are exposed copper resulting from the singulation process.

SQJQ936EL-T1_GE3SQJQ936EL-T1_GE3
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