SQS966ENW-T1_GE3

Overview

The SQS966ENW-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and operates up to a junction temperature of 175 °C. The device is housed in a compact PowerPAK 1212-8W package with a thermal resistance (junction-to-case) of 5.4 °C/W. At VGS = 10 V, the on-state resistance is typically 0.028 Ω (max 0.036 Ω), supporting a continuous drain current of 6 A. It meets AEC-Q101 standards and undergoes 100% Rg and UIS testing.

Feature Summary

• Dual N-channel configuration within a single leadless PowerPAK 1212-8W package for space-constrained designs.
• AEC-Q101 qualified for automotive reliability requirements.
• TrenchFET power MOSFET architecture providing low on-resistance and high switching efficiency.
• Guaranteed 100% gate resistance and unclamped inductive switching (UIS) testing.

Applications

• Automotive DC-DC converter circuits
• High-side or low-side load switch applications
• Power management modules in vehicle electronics

Procurement Notes

Verify component authenticity by cross-referencing the marking code Q027 against official Vishay documentation. Confirm that the specific suffix -T1 indicates the reel packaging format. Ensure compliance with RoHS directives as specified in the product summary. Validate that the supplier provides traceability to authorized manufacturing locations.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. The 60 V rating suits standard automotive electrical systems. Evaluate the 0.036 Ω maximum on-resistance against thermal dissipation limits at 27.8 W. Consider the 5.4 °C/W junction-to-case resistance for PCB copper plane design to ensure adequate heat spreading.

Part Context

This part belongs to the SQS series of automotive MOSFETs manufactured by Vishay Siliconix. It shares the PowerPAK 1212-8W form factor with other devices in the lineup but is distinguished by its dual-channel layout and 60 V breakdown voltage. The series emphasizes high thermal performance relative to its physical dimensions.

Replacement Considerations

SQS966ENW-T1_GE3

FAQ

What is the maximum pulsed drain current for the SQS966ENW?

The maximum pulsed drain current (IDM) is rated at 24 A under pulse test conditions with a width of 300 μs and duty cycle of 2%.

Does the SQS966ENW support unclamped inductive switching?

Yes, the datasheet confirms that 100% of units are tested for unclamped inductive switching (UIS). The single pulse avalanche energy (EAS) is rated at 7.2 mJ.

How does the on-resistance vary with temperature?

The on-resistance increases with junction temperature. At TC = 125 °C, the maximum RDS(on) rises to 0.055 Ω, and at TC = 175 °C, it reaches 0.066 Ω when VGS = 10 V.