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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V/200V 30A DIE
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V, 200V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc), 20A (Tc)
- Rds On (Max) @ Id, Vgs：9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
- Input Capacitance (Ciss) (Max) @ Vds：1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
- Power - Max：48W (Tc), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：Die
- Supplier Device Package：Die
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQUN702E-T1_GE3 is a Vishay Siliconix power component integrating three MOSFETs in a single triple die package. It contains an N- and P-channel pair (Channels 1 and 2) rated at 40 V, plus a standalone N-channel (Channel 3) rated at 200 V. Key electrical parameters include RDS(on) values of 0.0092 Ω for the 40 V N-channel, 0.030 Ω for the 40 V P-channel, and 0.060 Ω for the 200 V N-channel. Continuous drain currents are specified as 30 A for Channels 1 and 2, and 20 A for Channel 3. The device supports junction temperatures up to 175 °C and features TrenchFET technology.
Feature Summary
- Integrates dual voltage levels within a single optimized triple die package
- Includes 100% gate resistance and unclamped inductive switching testing
- Qualified for automotive applications under AEC-Q101 standards
Applications
- Automotive synchronous rectification circuits
- High-density DC/DC converter designs
- Power management modules requiring mixed voltage rails
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the requested part number matches the exact electrical specifications required for the target application. Cross-reference the manufacturer's latest datasheet revision to validate current production status and material categorization details before finalizing procurement orders.
Selection Notes
Select this component when space-constrained designs require both low-voltage bidirectional control and high-voltage switching capabilities. The integrated thermal performance reduces the need for multiple discrete heatsinks. Evaluate the total gate charge requirements to ensure the driving circuitry can handle the combined capacitance of all three channels efficiently during switching transitions.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family, utilizing advanced planar technology to minimize on-resistance. The triple die configuration allows designers to consolidate multiple functions into one footprint, reducing board area and interconnection parasitics compared to using separate discrete packages for similar voltage ratings.
Replacement Considerations
Direct pin-to-pin replacements must match the 40 V and 200 V breakdown ratings along with the specific RDS(on) characteristics. Verify that any substitute component maintains the same PowerPAK 5 x 9 triple case outline dimensions and thermal resistance profiles to ensure compatibility with existing PCB footprints.
